| 摘要 |
<p>PURPOSE:To provide manufacturing method for semiconductor device in which cost can be reduced and which can deal with high density packaging. CONSTITUTION:A copper conductor lead 15 is formed through electrolytic plating on a film carrier 14. Gold electrode protrusions 16 are then formed at positions on the conductor lead 15 corresponding to the electrode terminals 12 of a semiconductor element 11 to be mounted on the conductor lead 15. A hole part 18 is made through etching in the film carrier 14. Electrolytic gold plating 17 is then applied onto the surfaces of the conductor lead 15 and the electrode protrusions 16 in order to prevent corrosion of copper. The electrode protrusions are then positioned with respect to the electrode terminal 12 of the semiconductor element 11 through the electrolytic gold plating 17 and thermally bonded under pressure and then a thin protective coat 19 is applied onto the surface of the semiconductor element 11 thus completing a package.</p> |
