| 摘要 |
PURPOSE:To obtain an amorphous semiconductor having a desirable structure and composition due to the decomposition of glow discharge by providing different direct potentials to a substrate and electrodes adjacent to it and controlling an electric field distribution. CONSTITUTION:A clear and pure glass substrate is set on a holder 7. After exhausting a device less than 10<-8> Torr, a mixture gas 3 of H2 and SiH4 is introduced into a chamber 1 to keep it at 2X10<-1> Torr of vacuum. After heating the substrate at 300 deg.C, a high frequency wave having 13.5MHz is applied to an electrode to prepare Si ion and Si-H<+> ion. An electrode 8 for controlling an electric field is set approximately 10mm. apart from the holder 7, and a positive or a negative voltage having several volts to several ten volts and 0 to several volts are given to the holder 7 and the electrode 8 respectively from direct current sources 8 and 9. From this results, the velocity and the transporting amount of the formed ions to the substrate can be controlled accurately. Accordingly, an amorphous Si film having a desirable structure and composition can be obtained. |
