SEMICONDUCTOR STORAGE DEVICE AND DATA PROCESSOR

摘要

PURPOSE:To allow writing with a low-voltage power source by setting the potential of word lines at the time of writing higher than the power source potential with a static RAM of a high-resistance load type. CONSTITUTION:A word line potential transform circuit 50 is provided in the peripheral circuits of the SRAM. The circuit 50 sets the word line WL to be selected at the time of information writing at the voltage higher than the high power source voltage. Namely, a voltage transform timing signal generating circuit 54 forms plural timing signals on the basis of the oscillation pulses of a ring oscillator 51. A boosted potential generating circuit 56 generates the voltage higher than the power source voltage on the basis of these timing signals. A word line supply potential synthesizing circuit 57 synthesizes the word line supply voltage to be selectively and serially outputted in accordance with the signal of a boosting gate control signal forming circuit 55 by the above- mentioned boosted voltage and the supply voltage from the supply power source voltage and outputs this voltage via a word line potential control circuit 59.