| 摘要 |
PURPOSE:To enable low power source voltage operation by forming a region between a floating gate electrode and a control gate electrode of a multilayer insulation film which comprises a silicon oxide film, a silicon nitride film and a silicon oxide film. CONSTITUTION:An erase gate electrode 8 comprising an N type polycrystal silicon layer is formed in a self-matching manner by way of a silicon oxide film/silicon nitride film/silicon oxide film type third gate insulation film 7. In addition, a lower part of a floating gate electrode 6 is partially capacity- bonded by way of a second gate electrode 5 whose structure is identical to that of a control gate 3, thereby constituting a write in/read out transistor of the floating gate electrode 6, the first gate silicon oxide film 4, and source/ drain diffusion layers 14 and 15. |
