Semiconductor device with a high blocking voltage.

摘要

To increase their blocking (reverse) voltage, planar semiconductor devices such as MOSFETs, bipolar transistors, IGBTs are provided with field plates (5) and optionally with guard rings. A further improvement can be achieved if the zone adjacent to the surface of the semiconductor body outside the planar zones (3) is provided at the surface with a region (9) which is of the same conduction type as the zone and has a higher doping concentration than the latter. ……