| 摘要 |
PURPOSE:To obtain a semiconductor element with a GaAs substrate having a sufficient strength in a short time by combining a grinding with a high grinding speed and a chemical etching. CONSTITUTION:A GaAs substrate where a semiconductor element is formed is set to a grinding device and a rear surface is ground, and then a diamond whetstone whose average grain diameter is equal to or larger than 6mum is used as a grinding whetstone. If the average grain diameter is equal to or smaller than 6mum, a mirror surface grinding results and the grinding speed is reduced. Chemical etching is performed without performing grinding treatment on this rear surface, a surface where a semiconductor element of the GaAs substrate is formed is covered with a protection film and then a rear surface of the GaAs substrate is etched to 0.6mum or more by using a mixed liquid of ammonium, hydrogen peroxide, and water with an extremely slow etching speed, thus enabling the rear surface to be treated in a short time and obtaining a semiconductor with less chip cracks.
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