发明名称 METHOD AND APPARATUS FOR SURFACE ANALYSIS
摘要 PURPOSE:To allow the analysis of the chemical state in the microregion of even a sample weak to vacuum by maintaining a pressure difference between a vacuum chamber where the part to be installed in an ultra-high vacuum, such as X-ray source, is stowed and a vacuum chamber where the sample is installed. CONSTITUTION:The vacuum chamber 5 where the X-ray source 1 is stowed and the vacuum chamber 6 where the sample is installed are connected via an aperture 7. The vacuum chambers 5 and 6 are respectively independently evacuated to a vacuum. While the vacuum chamber 5 is maintained at the ultra-high vacuum together with the X-ray source 1, the vacuum chamber 6 is maintained at the high vacuum to the low vacuum. The pressure difference is brought between the adjacent vacuum chambers in this way and the ultra-high vacuum is maintained in the vacuum chamber 5 where the X-ray source 1, etc., are stowed in spite of the low vacuum in the vacuum chamber 6 where the sample is installed. Since there is no need for installing the sample in the ultra-high vacuum, the analysis of the chemical state on the surface of the microregion of the sample weak to the vacuum is completed in a short period of time.
申请公布号 JPH0419550(A) 申请公布日期 1992.01.23
申请号 JP19900121323 申请日期 1990.05.14
申请人 HITACHI LTD 发明人 NINOMIYA TAKESHI;SUZUKI KEIZO
分类号 G01N23/00 主分类号 G01N23/00
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