发明名称 Micro-power gain lattice
摘要 A broadband, high-gain RF signal amplifier which consumes a minimal amount of DC power has an input terminal to which an input signal to be amplified is coupled, and an output terminal from which an amplified output signal is derived. The signal amplifier has a plurality of first through nth signal amplification stages coupled in cascade between the input terminal and the output terminal. Each stage comprises an amplifier device having an input electrode, an output electrode and a control electrode. The output electrode is coupled to an amplifier device of an ith stage that is resistively coupled to the input electrode of the amplifier device of an (i+1)th stage, and is DC coupled through a rectifier device to the control electrode of the amplifier device of the (i+1)th stage. The control electrode of the amplifier device of the ith stage is resistively coupled to the input electrode of the amplifier device of the (i+1)th stage. The input terminal is coupled to the input electrode of the amplifier device of the first amplification stage, while the output terminal is coupled to the input electrode of the amplifier device of the nth amplification stage.
申请公布号 US5041797(A) 申请公布日期 1991.08.20
申请号 US19900615248 申请日期 1990.11.19
申请人 HARRIS CORPORATION 发明人 BELCHER, DONALD K.;NADLER, ALEXANDER J.
分类号 H03F1/02;H03F3/19;H03F3/42 主分类号 H03F1/02
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