| 摘要 |
PURPOSE:To remove only resist films and protective materials on each element efficiently and positively without damaging the surface of a semiconductor wafer by a method wherein a window is bored through a resist film, the whole surface is supplied with the protective material, the window bored section is filled with the protective material, the whole surface of the wafer is exposed and developed and the resist film is deteriorated. CONSTITUTION:When a protective material 111 is filed to a semiconductor wafer W, a positive type resist film 10 is formed onto the whole surface of the semiconductor wafer W, windows are bored through the resist film 10, the whole surface of the semiconductor wafer W is supplied with the protective material 111, and window bored sections are filled with the protective material 111. The whole surface of the semiconductor wafer W is exposed and developed, the resist film 10 under the protective material 111 is deteriorated, and the protective material 111 fed onto the resist film 10 is removed together with the resist film 10 and only a desired section is filled with the protective material 111. Adhesive properties with the surface of the semiconductor wafer W and the protective material 111 of the exposed, developed and deteriorated resist film 10 are eliminated, and the state in which only the insides of recessed sections 110 are filled with the protective material 111 is brought when an adhesive tape is stuck onto the surface of the protective material 111 and the protective material 111 is stripped off. |
