SEMICONDUCTOR RECTIFIER

摘要

PURPOSE:To cut down the inverse recovery time for accelerating the title rectifier with the gentle slope of current during the inverse recovery time kept as it is by a method wherein p<-> type semiconductor regions in specific intervals and width are intermittently formed in the surface region of n<-> type semiconductor region provided on n type semiconductor region. CONSTITUTION:The title semiconductor rectifier is composed af p<-> type semiconductor regions 13 intermittently arranged on anode side as well as a Schottky diode in short inverse recovery time trr laid between pn junction diodes. Accordingly, the inverse recovery time trr can be cut down to accelerate the rectifier moreover enabling the total impurity amount of the whole anode to be reduced without lowering the impurity concentration in the p<-> type semiconductor regions 13 so that the inverse recovery time trr may be cut down with the gentle slope of current di/dt2 during the inverse recovery time kept as it is. Through these procedures, the said characteristics can be notably enhanced by equally setting up the individual width w1 of the p<-> type semiconductor regions 13 and the width w2 between the p<-> type semiconductor regions 13.