METHOD OF FORMING PATTERN.

摘要

Patterns are formed on the side wall of a substrate having a recess by (i) coating a film of a pattern-forming material on the whole surface of the substrate including the recess; (ii) selectively removing, using anisotropic etching, the film from the surface of the substrate except from the side wall of the recess; (iii) spreading a mask layer, covering the upper and lower parts of the recess, on the area of the film that is to remain on the side wall; and (iv) selectively removing the unmasked part of the film from the side wall, then forming the desired pattern on the side wall. The pattern is formed by removing the film from the susbtrate using anisotropic etching.