发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To supply a prescribed test signal to a memory cell to correct errors by providing a test signal supplying means, which supplies the prescribed test signal to a second memory cell in response to an externally applied test mode selective signal. CONSTITUTION:A first memory cell to store a data signal, and the second memory cell to store an error correcting signal are provided. A data generating circuit 7a of an error correcting circuit (ECC) connected between a converting circuit 1 and an error correcting memory cell circuit 60 is provided. The memory cell circuit 60 is the second memory cell. The ECC data generating circuit 7a includes a mode detecting circuit 8 to detect the designation of an error correcting mode from the outside. In addition a test signal supply means to supply the prescribed test signal is provided. Thus the prescribed and arbitrary test signal can be supplied to the second memory cell to store the error correcting signal.</p>
申请公布号 JPH02270200(A) 申请公布日期 1990.11.05
申请号 JP19890092532 申请日期 1989.04.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 UEDA OSAMU;TOYAMA TAKESHI
分类号 G11C29/00;G11C16/06;G11C17/00;G11C29/42 主分类号 G11C29/00
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