| 摘要 |
PURPOSE:To obtain a photoresist material appliable in the wide wave-length region and high in resolution after development by using a copolymer consisting of a monomer having a main chain composed of specified repeating units and a vinyl monomer having an aromatic ring or aromatic hetero ring in a molecular structure having a specified average molecular weight. CONSTITUTION:The photoresist material is composed of the copolymer of the monomer having the main chain substantially composed of repeating units each represented by formula I and the vinyl monomer having an aromatic ring or aromatic hetero ring in the molecular structure, and the copolymer has an average molecular weight of 5X10<5> - 5X10<7>. In formula I, each of R<1> and R<3> is H, methyl, or like; R<2> is 1 - 6 C alkyl; R<4> is 1 - 8 C fluoroakyl, and l/m is 0.6 - 1.5, thus permitting the obtained photoresist to form a resist micropattern high in resolution by irradiation with lights in the wavelength region from ArF excimer laser beams to X-rays. |
