| 摘要 |
PURPOSE:To suppress the absorption loss during waveguiding to a low level by forming an optical wave guide layer of a II-VI compd. semiconductor having a large energy gap. CONSTITUTION:The branch type optical wave guide formed with a metallic electrode for carrier implantation in the branch part of the optical wave guide has at least clad layers 12, 14 of one conduction type consisting of the II-VI compd. semiconductor and the optical wave guide layer 13 of one conduction type consisting of the II-VI compd. semiconductor having the refractive index larger than the refractive index of the clad layers 12, 14 on a substrate 11. At least one layer of the respective layers are formed by selective epitaxial growth. Since the optical wave guide layer 13 is formed of the II-VI compd. semiconductor layer having the large energy gap, the shortening of the wavelength of the guided light is possible. The II-VI compd. semiconductor has a wide band gap. The absorption loss in the optical wave guide is suppressed to the lower level in this way even if the light (1mum band) of the same wavelength region as heretofore is guided. |
