发明名称 |
Method of measuring mobile ion concentration in semiconductor devices |
摘要 |
Mobile ion concentrations are measured in thick and disordered oxides by heating to a temperature greater than about 250 DEG C.; using a triangular voltage sweep-like method with applied voltages substantially greater than normally used heretofore; and observing peak displacement currents at voltages, e.g., greater than 60 volts, substantially greater than zero volts.
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申请公布号 |
US4950977(A) |
申请公布日期 |
1990.08.21 |
申请号 |
US19880287776 |
申请日期 |
1988.12.21 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
GARCIA, AGUSTIN M.;LAWRENCE, CRIS W.;THOMA, MORGAN J. |
分类号 |
H01L21/66;G01R29/24;G01R31/26;H01L21/3105 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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