发明名称 Specimen or substrate cutting method using focused charged particle beam and secondary ion spectroscopic analysis method utilizing the cutting method
摘要 A specimen or substrate cutting method of cutting or processing a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and irradiating the predetermined portion of the specimen or substrate with the focused charged particle beam is disclosed in which a particle species of the charged particle beam is selected such that each of the melting point of the particle species itself and the melting point of an alloy or compound of the particle species and constituent atoms of the specimen or substrate is not lower than 3/2 times of the temperature of the specimen or substrate in units of absolute temperature. A secondary ion mass-spectroscopic analysis method is also disclosed in which the charged particle beam is used as a probe to mass-analyze secondary charged ion successively generated from the cut portion of the specimen or substrate.
申请公布号 US4939364(A) 申请公布日期 1990.07.03
申请号 US19880253558 申请日期 1988.10.05
申请人 HITACHI, LTD. 发明人 ISHITANI, TOHRU;OHNISHI, TSUYOSHI;KAWANAMI, YOSHIMI
分类号 H01J37/08;C23F4/00;G01Q30/10;H01J37/305;H01L21/30;H01L21/302;H01L21/3065 主分类号 H01J37/08
代理机构 代理人
主权项
地址