| 摘要 |
PURPOSE:To eliminate the influence of remnants caused by a loading effect of RIE and facilitate accurate alignment of a wafer by forming dummy patterns in the neighborhood of patterns for position detection. CONSTITUTION:An alignment mark is composed of alignment patterns (patterns for position detection) 11 and two dummy patterns 12 and 13. The alignment patterns 11 are formed by dividing a linear pattern with a certain interval. The dummy patterns 12 and 13 are composed of linear patterns. The dummy patterns 12 and 13 are provided on both the sides of the alignment patterns 11 and are in parallel with the patterns 11 with a certain distance from them. A wafer or a film to be patterned is subjected to reactive ion etching(RIE) with a resist pattern as a mask to form the protruding alignment mark. |
