| 摘要 |
PURPOSE:Always to obtain an alignment signal having a high S/N ratio even with an alignment key having a small step by forming beforehand a protrusion pattern having a sufficient thickness on an alignment key forming region, and arbitrarily forming a necessary alignment key in the region on the way of a normal step. CONSTITUTION:A structure in which only an alignment key forming region is higher than the other region is formed. This structure is coated with thick resist. The thickness of resist 22 coating a protrusion alignment key forming region 19 is reduced in smaller thickness than that of resist 20 of other region. Even if the step of an alignment key 21 formed in the alignment key forming region is small, the relative ratio of the thicknesses of the resist films on the top to the bottom of the step is increased thereby to improve the S/N ratio of an alignment signal, thereby enhancing its aligning accuracy. |
