发明名称 AMORPHOUS SILICON SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To improve productivity by forming a rear surface electrode layer of a resin containing metal powder to thereby allow screen-printing. CONSTITUTION:A rear electrode layer is formed at a position corresponding to a transparent electrode layer 12 as a second electrode layer 16 on a transparent substrate 10 to which an amorphous silicon-containing semiconductor layer 14 is bonded, and an amorphous silicon-containing semiconductor element 18 is made up of a first electrode layer (transparent electrode layer) 12, the amorphous silicon layer-containing semiconductor layer 14 and the second electrode layer (rear electrode layer) 16. The rear electrode layer 16 is formed by printing the paste made of metal powder mixed with a resin into a predetermined pattern by e.g., a screen-printing, and then by being set. The powder-like metal to be used is one that can have an ohmic contact with amorphous silicon and both conductive and thermally resistant; preferably Ni, Cr, Ti, and Mo.
申请公布号 JPH027476(A) 申请公布日期 1990.01.11
申请号 JP19880157746 申请日期 1988.06.26
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 OOHAYASHI TADASHI;MIZUKAMI SEISHIRO
分类号 H01L31/04 主分类号 H01L31/04
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