| 摘要 |
PURPOSE:To enable a microcomputer and a non-volatile memory to be formed on the same chip, by forming a non-volatile memory MNOS element simultaneously in the Si gate process producing the microcomputer. CONSTITUTION:A CMOS transistor T1 for constituting a microcomputer and an MNOS transistor T2 for constituting a non-volatile memory element are provided on the same substrate. Active regions 11 constituting the MNOS transistor T2 are formed simultaneously when active regions of the CMOS T1 are formed. An oxide film 6 and a nitride film 5 are also formed during the formation of the active regions. After the formation of the nitride film 5, an aluminium interconnection 7 is provided on the CMOS T1 while, simultaneously, an aluminum interconnection 7 is also formed on the oxide film 6 so that it serves as a gate electrode of the MNOS T2. |
