MANUFACTURE OF MIS FIELD-EFFECT TRANSISTOR,申请号JP19870242134-传众专利搜索

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发明名称	MANUFACTURE OF MIS FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPS6482671(A)	申请公布日期	1989.03.28
申请号	JP19870242134	申请日期	1987.09.25
申请人	NEC CORP	发明人	TATSUMI ASAKO
分类号	H01L29/78;H01L21/318	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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