| 摘要 |
PURPOSE: To manufacture metal contacts meeting the requirement for the high reliability by the conventional structure forming method by precipitating Ti/Ti nitride double layers on the surface of structures having a contact hole and depositing an Al-Si alloy by the cathode sputtering as a contact hole filler. CONSTITUTION: After precipitating Ti/Ti nitride double layers 5, 6 on the surface of structures 1-3 having a contact hole 4, an Al-Si alloy 7 is deposited as a contact hole filler on the entire surface by the cathode sputtering and the entire surface is etched back with the double layers 5, 6 used as etch stoppers. A laminate of Al or Al alloy layers 9,19, 29 39 and intermediate Ti layers 8, 18, 28 is formed thereon; the number of the alloy layers is n, number of the intermediate layers is n-1, e.g. 2 at min. and the ratio of the thickness of the intermediate layer to the total thickness of the metal contact layers is 1:10. |
