| 摘要 |
<p>An LCLV is formed with a sapphire substrate (20) base, a highly doped, thin silicon epitaxial layer (2) forming an ohmic back contact on a smooth surface of the sapphire substrate, and a lightly doped, high resistivity silicon epitaxial layer (4) in the range of about 20-60 microns thick on the back contact. The use of a sapphire substrate provides a better surface quality and higher resolution than previously available with the semiconductor substrates. Lattice defects in the thin back contact are reduced by the formation of a buried amorphous layer adjacent the sapphire substrate, and subsequent recrystallization thereof using the unamorphized portions of the back contact as recrystallization seeds. The application of the invention to both MOS and Schottky diode LCLVs is discussed.</p> |
