发明名称 METHOD FOR FORMING POSITIVE RESIST PATTERN
摘要 PURPOSE:To improve the sensitivity and the resolution and the dry-etching durability of a resist material by using a polymer having a specified repeating unit as the resist material. CONSTITUTION:The resist material comprises the polymer having the repeating unit shown by the formula wherein X is halogen atom, R is hydrogen atom or a lower alkyl group, (n) is an integer of 20-20,000. The polymer is obtd. by homopolymerizing an alpha-halogen substd. acrylic acid ester, and the halogen atom substd. at alpha-position of said ester is preferably fluorine, chlorine or bromine atom, and the substituent group of a benzene ring is hydrogen atom or a lower alkyl group, and the lower alkyl group is preferably 1-5C alkyl group. Thus, the resist material having the high sensitivity and resolution and the excellent dye-etching durability is obtd.
申请公布号 JPS6429837(A) 申请公布日期 1989.01.31
申请号 JP19870185373 申请日期 1987.07.27
申请人 TOSOH CORP 发明人 MATSUMURA KOUZABUROU;KIYOTA TORU;NAKAZAWA TSUNEKO;TSUTSUMI YOSHITAKA
分类号 G03F7/039;H01L21/027 主分类号 G03F7/039
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