| 摘要 |
<p>PURPOSE:To prevent an increase in the propagation delay by the capacity generated between a gate line and source line by preventing the length at which a data line and gate line overlap in one picture element cell from exceeding the width of the gate line. CONSTITUTION:A thin film transistor is constituted of polysilicon 4 which is a conductive layer, a gate electrode and the gate line 1, and the picture element electrode 3 of the drain part. The data signal sent by the data line 2 is sent to the picture element electrode 3 when a scanning signal is successively sent to the gate line 1 and the gate of the thin film TR is selected. Since a distributed capacity is added to the gate line in parallel with the resistance of the line itself, the delay of the data transfer arises. The overlap of the data line and the gate line is, thereupon, minimized so that the lines overlap on each other at the length which does not exceed the width of the gate line. The overlap capacity of the data line and the gate line is thereby decreased and the propagation delay time of the gate signal is decreased.</p> |
