Quantum well semiconductor laser device

摘要

A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin AlxGa1-xAs (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 ANGSTROM to 150 ANGSTROM .