Method of growing single crystal silicon carbide,申请号US19600030658-传众专利搜索

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发明名称	Method of growing single crystal silicon carbide
摘要
申请公布号	US3228756(A)	申请公布日期	1966.01.11
申请号	US19600030658	申请日期	1960.05.20
申请人	TRANSITRON ELECTRONIC CORPORATION	发明人	HERGENROTHER KARL M.
分类号	C30B23/02	主分类号	C30B23/02
代理机构		代理人
主权项
地址

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