发明名称 |
Random-access method with repair area and method of repairing such a memory |
摘要 |
The invention relates to an integrated semiconductor memory including for each area of cells at least one backup area which is accessed via a repair line characterised in that each element (row or column) is connected to the repair line by way of branching means 5 which can be activated through energy radiation. <IMAGE>
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申请公布号 |
FR2613524(A1) |
申请公布日期 |
1988.10.07 |
申请号 |
FR19870004720 |
申请日期 |
1987.04.03 |
申请人 |
THOMSON CSF |
发明人 |
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分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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