| 摘要 |
<p>PURPOSE:To suppress an internal stress between metal layers near a bump and to improve a strength between the bump and a base metal by heat treating a semiconductor substrate in which a metal bump electrode has been precipitated at a low temperature and forming an alloy layer between first and second metal layers. CONSTITUTION:In the manufacture of a semiconductor device for forming bumps 18 on an electrode pad 12 as signal input/output electrodes of a semiconductor element, an Zr layer 14 is formed, for example, by a sputtering method on the pad 12, a metal layer 16 of any of Ti, V, Cr, Mn, Co, Ni, Fe and Cu for forming the alloy layer with the layer 14 is formed thereon, and heat treated at a low temperature to generate an alloy layer 19 between the layer 14 and the layer 16 formed on the layer 14. Thus, the strengths of a base metal and the bumps 18 are improved, the hardness of the bumps 18 is reduced by a low temperature heat treatment to improve the bondability of the lead electrode to the bumps 18, the internal stresses among the metal layers 12, 14, 16, 18, 19 are alleviated to suppress the crack of a passivation film.</p> |
