| 摘要 |
PURPOSE:To allow a second-layer wiring crossing a first-layer wiring to exist on a flattened surface by a method wherein a second conductive layer is allowed to be over a first conductive layer, which fills up a trench provided in the surface of a semiconductor substrate, and to cross the first conductive layer with an interlayer insulating film between. CONSTITUTION:A zonal groove 6 is provided in a semiconductor substrate 1 and, when Al is evaporated on the entire surface by vacuum deposition, the groove 6 is filled up with Al. Photolithography is then applied for the removal of Al from the surface of the semiconductor substrate 1. A process follows wherein Al is retained on the groove 6 only for the formation of a zonal first layer electrode wiring 2. Next, a coating is provided of an insulating film 3 that is a CVD oxide film, and then photolithography is applied again for the provision of a junction hole 4. Another vacuum deposition is accomplished for the deposition of Al, and a second-layer electrode wiring 5 is built, again by photolithography. The result is a flattened surface free of steps on the insulating film 3, which facilitates patterning by photolithography.
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