发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To form a high-precision, high-reliability insulating film fitting a given circuit element characteristic by a method wherein a second insulating film is formed on the entire surface including a first insulating film and then is removed for the construction of a flattened surface. CONSTITUTION:A resist 6 is formed on a high dielectric constant insulating film 5 and the resist 6 is next removed with a pattern retained for capacitors and the like. The now-patterned resist 6 serves as a mask for the removal by etching of the high dielectric constant insulating film 5, after which a low dielectric constant insulating film 7 is formed on the entire surface by application. Some difference still in existence on the surface are to be almost flattened by applying a resist 8. Finally, a flattening process is accomplished, from above, on the resist 8 and low dielectric constant insulating film 7, which continues until the high dielectric constant insulating film 5 is exposed. A second-layer wiring 9 is then built. The result is a high-precision, high-reliability insulating film that well fits the characteristic of a given circuit element.
申请公布号 JPS63204742(A) 申请公布日期 1988.08.24
申请号 JP19870038292 申请日期 1987.02.20
申请人 SHARP CORP 发明人 NAKAGAWA YASUHITO
分类号 H01L21/302;H01L21/3065;H01L21/3205;H01L21/822;H01L27/04;H01L29/80 主分类号 H01L21/302
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