MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a highly reproducible pattern having a high aspect ratio at its cross section by giving a treatment to a photoresist layer applied on a semiconductor substrate so that solubility to a developer becomes high in the direction of the depth, thereby developing its pattern later on. CONSTITUTION:A positive resist of novolak resin is applied to a silicon substrate and a pattern is replicated by exposing it. (its wave length is 436 nm) Then the substrate is heated at a temperature of around 100 deg.C in an atmosphere of N2 and is irradiated by U.V. light having a wave length 200-320 nm. This treatment makes solubility to a developer higher in the direction of the depth. Thus the pattern having a high aspect ratio at its cross section is obtained when it is developed.