| 摘要 |
PURPOSE:To facilitate mounting a semiconductor element on a glass substrate even after the process of forming an amorphous silicon film without degrading the adhesion strength of a conductor film to the glass substrate by providing a process in which a protective glass layer is formed on the conductor film before a plasma CVD process and a process in which the protective glass layer is removed after the plasma CVD process. CONSTITUTION:Metal organic gold paste is applied to a glass substrate 1 by a screen printing and subjected to a low temperature baking process at 700 deg.C twice and gold conductor films 2 with a 0.6 mum thickness and chrome electrodes 3 are formed. Lead borosilicate glass is applied by a screen printing and subjected to a baking process to form a protective glass layer 4 which covers the gold conductor film 2. After a semiconductor element 5, gold wires 6 and a resin sealing 7 are mounted, an amorphous silicon film 8 is formed by a plasma CVD process and, after a silicon ITO transparent electrode 9 is formed on the film 8, the sensor part of the ITO electrode is covered with resist and the protective glass layer 4 is removed by etching.
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