| 摘要 |
PURPOSE:To enable the difficulty of the film peeling of a dry etching-resistant, resist to be dissolved by patterning a resist, and applying an oxygen plasma etching through the openings thereof to an exposed polymeric thin film layer, thereby making the linearity of the pattern edge good. CONSTITUTION:A title method comprises a process (a) for providing a polymeric thin film layer 3 on a layer 2 to be subjected to a fine etching process on a substrate 1, a process (b) for providing an ionizing radiation resist layer 4 on the layer 3, a process (c) for performing a pattern drawing by an ionizing radiation 5, and a process (d) for performing a development to form an ionizing radiation resist pattern 6. It further comprises a process (e) for dry-etching and patterning through the openings the exposed polymeric thin film layer 3 by means of an oxygen plasma 8 to make the linearity of the pattern edge good, a process (f) for forming a fine pattern 10 part, and a process (g) for peeling off a polymeric thin film pattern 9 and an ionizing radiation resist pattern 6'. With this, the traditional generation of scums 7 and the bad film peeling of the dry etching-resistant resist are dissolved, providing a high precision.
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