| 摘要 |
PURPOSE:To make it possible to wash the inside of a complicated structure such as grooves without physical damage of a silicon substrate, by keeping the silicon substrate at a temperature lower than 300 deg.C, flowing active hydrogen in an atomic state on the silicon substrate, and removing inorganic impurity contamination of a metal and a metal compound on the silicon substrate. CONSTITUTION:The temperature of a silicon substrate 11 is kept at a value lower than 300 deg.C. Active hydrogen in an atomic state is flowed on the silicon substrate 11. Inorganic impurity contamination due to a metal and a metal compound on the silicon substrate 11 are removed. Nemely, the active hydrogen yielded in a mercury chamber 16 is introduced into a treating chamber 13 and reacted with the metal impurities and the metal compound impurities on the silicon substrate 11. The reacted material is discharged through an exhaust port 19. Thereafter the silicon substrate is taken out of the treating chamber 13 and washed with water. Thus nonvolatile hydride can be removed. The hydride of alkaly metal and alkaline earth metal can be readily removed in the following washing step using water.
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