| 摘要 |
PURPOSE:To make a pertinent correction for the surface of a high-gauge diamond grinder for finish grinding by baking SiC grains containing SiO2 as an impurity and formed to a predetermined shape for giving a predetermined porosity thereto at a specified temperature level in a vacuum condition. CONSTITUTION:A dressing material for a grinding stone is formed, for example, into a disc so supported on a dresser as to be freely rotatable and this compact is such that SiC grains containing SiO2 as an inpurity are baked at temperature of 1,400-1,800 deg.C in a vacuum condition to give a porosity of 20-50% or more preferably 30-40%. And SiC powder is coated with an oxide film of SiO2 and this SiO2 film is deoxidized with C at high temperature. And at a temperature level of 1,400 deg.C or higher in a vacuum condition, suitable bonding among the grains takes place and reaction in a remarkably low temperature range occurs, compared with a general recrystallization method applicable at 2,000 deg.C or higher. Therefore, no grain growth can be noticed. Also, so there is no shrinkage behavior, air bubbles occupy 30-40% and it becomes possible to obtain a desirable condition for the dressing material of a high-gauge diamond grinder. |
