| 摘要 |
PURPOSE:To easily establish the wiring as the need arises by a method wherein, after an Al-wired part has been cut by a contact hole having a high aspect ratio, an Al film which is located inside the contact hole and its circumference is melted. CONSTITUTION:After an SiO2 film 7 has been formed on an Si substrate 6, an Al film to be used for the first wiring is formed on it. Then, after a PSG film 9 has been formed, an opening 10 is shaped. Then, an Al film 11 to be used for the second wiring is formed. Because the aspect ratio of the opening 10 is large at this time, the Al film 11 is cut at the opening. If an excimer laser beam is directed from above the Al film 11, the Al film 11 is gradually melted and flows into the opening 10. As a result, the Al film 8 is connected with the Al film 11 and these two films become electrically conductive. |
