| 摘要 |
PURPOSE:To reduce a defect factor in order to obtain a flow of large current, by forming triangular or trapezoidal chips also on the peripheral part of a circular semiconductor substrate, on which chips are not formed conventionally. CONSTITUTION:Square chips mutually partitioned by guard rings 2 are disposed in rows and columns to form a plaid pattern on the flat plane of a circular semiconductor substrate 1, and are provided with square electrodes 4 which are insulated to each other by using an insulating film 3. In spaces left remain on the peripheral part of the substrate 1, resulted from formation of the square chips, triangular or trapezoidal chips, whose spaces against the square chips and between themselves are partitioned also by guard rings, are formed so as to neighbor the square chips, and provided with triangular electrodes 6 and trapezoidal electrodes 7 both of which are mutually insulated by the oxide film 3, and outermost peripheries of these electrodes 6 and 7 are formed in circular shapes eccentric with the substrate 1. Hence, areas effective for elements can be enlarged. |
