| 摘要 |
PURPOSE:To reduce surface leakage current and improve the resolving power of energy by forming a pair of electrodes on electrode formation surfaces which are the opposite surfaces of a single-crystalline CdTe semiconductors and forming irregularities at sidefaces located between the electrode formation surfaces. CONSTITUTION:Electrodes 4 and 4' are formed on electrode formation surfaces 2 and 2', i.e. the opposite surfaces of a single-crystalline CdTe semiconductors 1. Once an electron-hole pair is produced in a deplation layer 5 by incident radiation, it is accelerated by a biased voltage to turn into ionization currents and they are taken out as output signals after the direct current component is removed through a capacitor C. In such a case, irregularities formed on sidefaces 3 permit current path lengths of the sidefaces to increase and leak currents to decrease. This makes it possible to use a high-voltage load and to produce a stronger electric field, so that the average free path of carriers becomes greater and accordingly the resolving power of energy is improved.
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