| 摘要 |
<p>A method for the examination of electrically active impurities of semiconductor materials or semiconductor structures which comprises the steps of providing a junction in a sample taken from the semiconductor to be tested, inserting the sample in a microwave field, providing a space charge layer in the junction by applying a reverse bias thereto, filling the electrically active defects of the space charge layer, examining the thermal emission process aiming at reaching a thermal equilibrium state that takes place following said filling step by measuring the change of the microwave field that takes place due to changes in the microwave absorption in the sample during the thermal emission process. The microwave field should be present at least during the examination of the transient of the microwave absorption. In a measuring arrangement for carrying out the method a sample (24) of the semiconductor comprises a junction, the sample is provided with a pair of electrical contacts, and the measuring arrangement comprises a biasing means (26) coupled to the contacts for reverse biasing the junction to provide a space charge layer therein, a means (26) for filling the electrically active defects in the layer during a predetermined period or periods, and transient detecting means (27) for detecting transient changes in the junction after termination of said periods, and the arrangement comprises furthermore a microwave generator (21), a microwave means (23) coupled to the generator which defines a microwave field, and the sample is arranged in the field of the microwave means with a contact coupled to earth, the transient detecting means is a microwave detector arranged to detect transient changes in the microwave absorption due to the changes in the junction.</p> |
