| 摘要 |
PURPOSE:To improve the breaking resistance of a gate turn-OFF thyristor by forming a main current path in a low resistance layer in many pores, and setting the interval of the adjacent pores to carrier diffusion length or shorter in an anode/base layer. CONSTITUTION:A P-type cathode/base layer 2, a P-type low resistance layer 3 and a P-type semiconductor layer 4 are sequentially formed on an N-type semiconductor wafer 1. Many pores 100 are arranged radially in multiple-ring state in the layer 3. A current of ON state flows laterally radially in an N-type anode/base layer 6. Since the interval (b) of the adjacent pores 100 is set to carrier diffusion length of shorter in the layer 6, the layer 6 directly under the layer 3 is conducted. Thus, the ON voltage does not rise. A gate turn-off resistance can be reduced by decreasing the size (a) of the pore 100.
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