| 摘要 |
PURPOSE:To improve the speed and accuracy of exposure with a charged beam by a method wherein the beams of the shape and dimension of a pattern are formed by a first deflector on the basis of a shape code and pattern dimension information which are used as exposure pattern information and the beam position is corrected by a second deflector on the basis of the shape code or the shape code and the pattern dimension information. CONSTITUTION:A pattern to be exposed is previously split into a plurality of patterns which can be exposed with one time of beam irradiation and pattern information (A, x, y, X and Y) are formed from the respective split patterns and are ready-stored in a computer 30. The shape code A and the pattern dimension information (x) and (y) of the pattern information are fed to a variable forming beam dimension control circuit 35 and the beam is deflected by a deflector 24 by the desired amount to form the electron beams of the prescribed configuration and dimension, while the pattern information are fed to a deflection control circuit 33 and the beam position on a sample 11 is varied. Then, the correction amount of the beam position is found on the basis of the shape code A and the pattern dimension information (x) and (y) and the beam is microscopically deflected by a deflector 26 to perform correction of the beam position. Thereby, even though the reference position is shifted, the forming beam can be irradiated on the desired position.
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