| 摘要 |
PURPOSE:To protect semiconductor device characteristic from degrading during a heat treatment for the reflow of an interlayer insulating film by a method wherein a polycrystalline silicon film is formed on a source.drain diffusion region and gate electrode. CONSTITUTION:A polycrystalline silicon gate electrode 14 is formed with the intermediary of a gate oxide film 13 formed on a semiconductor substrate 11 of one conductivity type. An oxide film 18A is then formed to cover the gate electrode 14. A process follows wherein an impurity of the opposite conductivity type is introduced with the gate electrode 14 serving as a mask for the formation of a source.drain diffusion layer 15 on the semiconductor substrate 11. Next, a polycrystalline silicon film 17 and interlayer insulating film 16 are formed in that order, to cover the entire surface. A heat treatment is accomplished in a steam atmosphere for the conversion of the polycrystalline silicon film 17 into a silicon oxide film 18 and at the same time for the reflow of the interlayer insulating film 16.
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