| 摘要 |
PURPOSE:To form contact electrodes having no disconnection even in a small contact by a method wherein, after the contact electrodes are each formed in advance in the shape of a high-melting point metal pillar, an insulating film is formed on the peripheries of the electrodes. CONSTITUTION:A nitriding film 20 is formed on a tungsten layer 6 which is used as a high-melting point metal layer by an LPCVD method and photo resist films 21 are formed only on the contact electrode forming parts. Then, nitriding films 20a are left on the contact electrode forming parts by performing an etching on the nitriding film 20 using the resist films 21 as masks and after the resist films 21 are removed, a heat treatment is performed in an atmosphere of oxygen. Whereupon, the parts not being covered with the nitriding films 20a are turned into tungsten oxide films and parts of the tungsten oxide films are turned into tungsten silicide layers 7. Thereafter, the nitriding films 20a are removed, an oxide film 22 is formed as a second insulating film by an LPCVD method, a second resist film 23 is formed thereon by coating and thereafter, the contact electrode forming parts are etched until tungsten layers 6a on the contact electrode forming parts are exposed in such conditions that etching rates of the resist film 23 and the oxide film 22 become equal.
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