| 摘要 |
PURPOSE:To prevent the under-etching or over-etching at patterning the wiring consisting of aluminum or its alloy by arranging a nitride layer in the lower part and detecting the time when the patterning finishes by a rapid change of the intensity of light emission of nitrogen. CONSTITUTION:When the Al wiring connected to the underlying wiring formed of polysilicon, a lower insulating film 2 consisting of SiO2 is formed on an Si substrate 1 in which an impurity introducing region is formed and on that film, a polysilicon wiring 3 is formed. On such a substrate to be processed, an SiO2 interlaminar insulating film 4 and subsequently an Si3N4 layer 5 are formed. By using a resist mask as a mask, a part of the Si3N4 layer 5 is removed selectively and a part of the SiO2 interlaminar insulating film 4 is removed to form a wiring contact window 6. Next, an Al layer 7 is formed on an Si3N4 layer 5 including the inside of the contact window 6 is formed and on this Al layer 7, a resist pattern 8 is formed and patterned to form an Al wiring 107.
|
