| 摘要 |
PURPOSE:To prevent radiation damage, by irradiating ultraviolet rays to reacting gas of compound containing at least silicon, in order to form a transparent passivation film on the surface of an Si thin film semiconductor element. CONSTITUTION:By plasma CVD using SiH4 as a main source gas, on a substrate 1 having a transparent conducting electrode film 2, a P-type layer 31, i-type layer 32 and N-type layer 33 are sequentially formed, on which SiO2 is formed by photo CVD. At this time, the substrate temperature may be 300 deg.C, and 185nm ultraviolet rays are irradiated to SiH4-N2O reaction gas from an Hg lamp. After an SiO2 film is formed, holes 5 are opened therethrough and an electrode is evaporated so that it can be obtained with the N-type Si layer 33 with a low resistance at the holes 5. Thus surface damage can be remarkably reduced and a better photovoltaic device can be provided. |
