发明名称 DRIVING CIRCUIT FOR FIELD EFFECT TYPE TRANSISTOR
摘要 PURPOSE:To obtain a driving circuit for field effect type transistor which can secure the transient balance of a current, by connecting the 1st output terminal of a switching circuit to the gate of each field effect type transistor via the 1st and 2nd series circuits consisting of diodes and resistances and also connecting those gates to the 1st output terminal from each diode via a common resistance. CONSTITUTION:When the 1st and 2nd field effect type transistors are turned on by a switching circuit 9, the positive voltage is applied between the gate G and the source S via the 1st and 2nd series circuits D1R1 and D2R2. Thus the rise current balance is secured between voltages VGS1 and VGS2 applied between the gates G and sources S of the 1st and 2nd transistors with no mutual effects. While both voltages VGS1 and VGS2 applied between those gates G and sources S have falls via a common gate resistance R3 in case both transistors are turned off by the circuit 9. Thus the current balance is secured with reception of the mutual effects.
申请公布号 JPS61245617(A) 申请公布日期 1986.10.31
申请号 JP19850086961 申请日期 1985.04.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIZAWA YUJI
分类号 H03K17/12;H03K17/687 主分类号 H03K17/12
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