| 摘要 |
PURPOSE:To improve the precision of fine processing of a layer to be etched by using an aluminum layer as a mask, and adding oxygen to the gas. CONSTITUTION:A polycrystalline silicon layer is formed on a molten quartz substrate by means of a vacuum chemical vapor deposition apparatus, and then a composite layer of chromium-aluminum is formed in this order by means of the electron beam heating continuous vapor deposition. Thus, a mask is obtained through fine processing of the chromium-aluminum composite layer by the conventional photolithography or wet etching method, completing this sample. In the processing, the sample is placed on the bottom electrode in an etching reaction bath 1, the reaction bath 1 is fully evacuated by an oil rotating pump 10. Further, a mixture gas of 10% oxygen in carbon trifluoride monohydrogenated which is a kind of carbon fluoride is introduced through a gas introducing valve 5 into the reaction bath 1, a valve 8 and a pressure regulating valve 9 are adjusted to maintain the degree of vacuum within the reaction bath 1 at 0.1Torr, and high-frequency power is applied. With this, the fine processing of the silicon layer is completed. |
