| 摘要 |
PURPOSE:To prevent a BPO4 from being generated by providing an insulating film on a borophosphosilicate glass (BPSG) film, thereby protecting the BPSG film against PH3 gas when diffusing N<+> in a contacting hole region. CONSTITUTION:The gate of an N-channel MOS transistor is formed with P-type Si substrate 1. thereafter, P is diffused in PH3 atmosphere to form a source and a drain, SiH4, PH3 and B2H6 are then simultaneously oxidized by a normal CVD method, a BPSG film 6 is grown, and a melt flow is performed in wet oxygen. Then, the SiH4 is oxidized again by a normal pressure CVD method to grown an NSG film 8. thereafter, a contacting hole 7 is opened with a window, N<+> is diffused by a heat treatment, a metallization is then executed to form metal wirings. |
