| 摘要 |
PURPOSE:To form the electrode having a good-quality shape easily by forming a metallic layer as a material for electrode by patterning of a photoresist film formed on an organic material layer and isotropic dry etching of the organic material layer. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 and the organic material layer 13 which has the etching rate for dry etching, e.g., O2 plasma etching which is several times that of a usual photoresist is formed on said film 2. On the material layer 13, a pattern is formed with a photoresist 14 and isotropic dry etching is done by using the resist 14 as a mask. An Al layer 15 is formed on a surface of the substrate 1. The resist 14 and the material layer 13 are removed by etching and also the Al layer 15 present on those is removed. Thus the electrode having a good-quality shape can be formed easily. |
